2024 Punch-through stopper dopants intel

Punch-through stopper dopants intel

Author: xzin

August undefined, 2024

WebSelf-aligned punch-through stopper (SPS) MOSFETs are made using high energy ion implantation; punch-through stopper (PTS) layers are formed after gate electrode delineation. The SPS structure features: 1) a retrograded PTS layer with a gradually increasing impurity profile; and 2) a relatively lower impurity concentration around the … WebThe process is also enabled by a fin profile optimization and a novel sub-fin doping technique. “Sub-fin doping of high performance transistors is achieved through solid-source doping to enable better optimization of punch-through stopper dopants,” according to the …

US9082853B2 - Bulk finFET with punchthrough stopper region and …

Webachieved through solid-source doping to enable better optimization of punch-through stopper dopants. Fig. 2 shows transistor fin-cut and gate-cut images. NMOS and PMOS Idsat/Ioff and Idlin/Ioff curves are shown in Figs. 3 and 4. At 0.7V Vdd, 10nA/um Ioff, … WebSep 21, 2015 · The punch through stopper regions 602 extend laterally below the punch through stopper regions 604. FIG. 7 illustrates a side view following the deposition of an insulator layer 702 over the substrate 102 including portions of the punch through stopper … ctlt isu

Bottom Oxide Bulk FinFETs Without Punch-Through-Stopper for …

WebStructural advancements of 5-nm node bulk fin-shaped field-effect transistors (FinFETs) without punch-through-stopper (PTS) were introduced using fully calibrated TCAD for the first time. It is challenging to scale down conventional bulk FinFETs into 5-nm technology node due to the sub-fin leakage increase. Meanwhile, bottom oxide deposition after … WebFeb 20, 2024 · Fin field-effect transistor (FinFET) scaling beyond the 10-nm node requires formation of a junction isolation region between the source and the drain to suppress sub-fin leakage current. In this paper, heavy species such as Sb and As were implanted at room … WebThe dopants used to form the punchthrough stopper are supplied from a shallow trench isolation liner. ... Intel Corporation: Thin channel region on wide subfin CN106158748B ... Self-aligned punch through stopper liner for bulk FinFET US9865597B2 (en) 2015-09-08: … ctlt military

Impact of Punch-through Stop Implants on Channel Doping and …

WebMay 16, 2024 · WELL AND PUNCH THROUGH STOPPER FORMATION USING CONFORMAL DOPING . United States Patent Application 20240066531 . Kind Code: A1 . Abstract: A ... and annealing to drive dopants into the fins from the first dopant layer in the second region … WebNov 3, 2016 · The punch through stopper region 17 is typically present at the base, i.e., base portion, of the fin structure 5, and is below the lower surface of the sacrificial spacer 14. When forming an n-type finFET, the punch through stopper region 17 typically has a p … ctl ticketsWebMar 14, 2024 · Structural modifications of 5-nm node nanosheet FETs (NSFETs) were quantitatively analyzed using fully calibrated TCAD. The NSFETs with crescent inner spacer improve the short-channel effects by increasing effective gate lengths but also increase … ctl toptica

"WebThe method further includes annealing the structure 44 to form a punch through stop layer 46, 48, the step of annealing the structure causing p-type dopants to be driven from the p-doped oxide layer into one or more of the semiconductor fins 22 (or 72) in the nFET region … " - Punch-through stopper dopants intel

Punch-through stopper dopants intel

WebMay 16, 2024 · A method for doping punch through stoppers (PTSs) includes forming fins in a monocrystalline substrate, forming a dielectric layer at a base portion between the fins and forming spacers on sidewalls of the fins down to a top portion of the dielectric layer. The dielectric layer is recessed to form gaps between the top portion of the dielectric layer and … WebJan 23, 2015 · Punch through leakage is a main component of off-state leakage in bulk FinFETs and it is usually suppressed by forming a punch through stop layer (PTSL). With triangular fins being used in 1st ...

Did you know?

WebFeb 1, 2024 · Download Citation On Feb 1, 2024, Robert J. Mears and others published Punch-through stop doping profile control via interstitial trapping by oxygen-insertion silicon channel Find, read and ... Webdiffuse the dopants in the semiconductor substrate and form a punch through stopper region below the fin that includes the dopants. 2 Claims, 20 Drawing Sheets . US 9,368,569 B1 Page 2 (51) Int. Cl. HOIL 27/088 (2006.01) HOIL 2/8234 (2006.01) (56) References Cited

WebFeb 20, 2024 · Fig. 1. (a) Schematic showing the structure of Ge p-FinFET with a PTS layer at the bottom of the fin. (b) Cross-sectional view of FinFET showing Sb, As, and As + P + N2 as PTS implants in the n-Ge substrate. - "Impact of Punch-through Stop Implants on Channel Doping and Junction Leakage for Ge ${p}$ -FinFET Applications"

WebThe fins have been modified from the 22nm process to have a more vertical profile, slimmed down to 8nm wide, and Intel also claims a “novel sub-fin doping technique” using “solid-source doping to enable better optimization of punch-through stopper dopants.” WebFor example, the concentration of punch through stopper dopant that diffuses into the active portion of the fin structure 10 using the methods described with reference to FIGS. 1-5 is orders of magnitude less than the concentration of the punch through stopper dopant that is present in the channel region of device formed using prior methods ...

WebNov 24, 2015 · A technique relates to forming a self-aligning field effect transistor. A starting punch through stopper comprising a substrate having a plurality of fins patterned thereon, an n-type field effect transistor (NFET) region, a p-type field effect transistor (PFET) region, and a center region having a boundary defect at the interface of the NFET region and the …

WebAug 16, 2012 · Self-aligned punch through stopper liner for bulk FinFET US9805987B2 (en) 2015-09-04: 2024-10-31: International Business Machines Corporation: Self-aligned punch through stopper liner for bulk FinFET US10879241B2 (en) 2015-09-25: 2024-12-29: Intel … ctlt locationsWebFeb 14, 2024 · A method for doping fins includes, for a first dopant layer formed in a first region and a second region to a height continuously below a top portion of a plurality of fins such that an entirety of the first dopant layer is formed below the top portion of the plurality of fins, and a dielectric layer formed over the top portion of the plurality of fins, removing … ctl titleWebSelf-aligned punch-through stopper (SPS) MOSFETs are made using high energy ion implantation; punch-through stopper (PTS) layers are formed after gate electrode delineation. The SPS structure features: 1) a retrograded PTS layer with a gradually … earthquake and lahar sensorsWebMeanwhile, a heavy punch-through-stopper (PTS) dop-ing is mandatory to block sub-˝n leakage of the bulk FinFETs [1], [5] [7]. However, PTS doping degrades carrier The associate editor coordinating the review of this manuscript and approving it for publication was Anisul Haque. mobility within the ˝n channel [6] and induces perfor- ctl to pbiWebSolid-source doping has also been reported as a key feature for the implementation into manufacturing of bulk finFETs at 14 nm technology node by enabling better optimization of the punch-through stopper dopants [3]. MLD applied to SOI based finFETs (with 20 nm wide fins and L gate ∼40 nm) was demonstrated in Ref. [67]. earthquake and its causesWebAlthough the crescent inner spacer and slanted S/D structure are unintendedly formed under process, these modifications lead to the performance boosting and the process simplicity of the 5-nm node NSFETs. Structural modifications of 5-nm node nanosheet FETs (NSFETs) … earthquake and its classificationWebOne problem in SiGe PFET fabrication is controlling punch through stopper (PTS) doping. PTS doping should include n-type dopants (such as, As, P, etc.). N-type dopants are known to have extremely high diffusivity in SiGe. This makes it challenging to control PTS doping below a channel region in bulk SiGe fin field effect transistors (finFETs ... earthquake and flood insurance underwriting